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EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Features
* 30MHz -3dB bandwidth * Supply voltage = 4.5V to 16.5V * Low supply current (per amplifier) = 2.5mA * High slew rate = 33V/s * Unity-gain stable * Beyond the rails input capability * Rail-to-rail output swing * Available in both standard and space-saving fine pitch packages
General Description
The EL5210C and EL5410C are low power, high voltage rail-to-rail input-output amplifiers. The EL5210C contains two amplifiers in one package and the EL5410C contains four amplifiers. Operating on supplies ranging from 5V to 15V, while consuming only 2.5mA per amplifier, the EL5410C and EL5210C have a bandwidth of 30MHz -(-3dB). They also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables these amplifiers to offer maximum dynamic range at any supply voltage. The EL5410C and EL5210C also feature fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make these amplifiers ideal for high speed filtering and signal conditioning application. Other applications include battery power, portable devices, and anywhere low power consumption is important. The EL5410C is available in a space-saving 14-Pin TSSOP package, as well as the industry-standard 14-Pin SOIC. The EL5210C is available in the 8-Pin MSOP and 8-Pin SOIC packages. Both feature a standard operational amplifier pin out. These amplifiers operate over a temperature range of -40C to +85C.
Applications
* * * * * * * * Driver for A-to-D Converters Data Acquisition Video Processing Audio Processing Active Filters Test Equipment Battery Powered Applications Portable Equipment
Connection Diagram
Ordering Information
Part No. EL5210CS EL5210CS-T13 EL5210CY EL5210CY-T7 EL5210CY-T13 EL5410CS EL5410CS-T13 EL5410CR EL5410CR-T13 Package 8-Pin SOIC 8-Pin SOIC 8-Pin MSOP 8-Pin MSOP 8-Pin MSOP 14-Pin SOIC 14-Pin SOIC 14-Pin TSSOP 14-Pin TSSOP Tape & Reel 13" 7" 13" 13" 13" Outline # MDP0027 MDP0027 MDP0043 MDP0043 MDP0043 MDP0027 MDP0027 MDP0044 MDP0044
VOUTA 1 VINA- 2 VINA+ 3 VS+ 4 VINB+ 5 VINB- 6 VOUTB 7 + + + +
14 VOUTD 13 VINDVOUTA 1 12 VIND+ VINA- 2 11 VSVINA+ 3 10 VINC+ VS- 4 9 VINC8 VOUTC + + 7 VOUTB 6 VINB5 VINB+ 8 VS+
November 16, 2000
EL5210C (MSOP-8, SOIC-8)
EL5410C (TSSOP-14, SOIC-14)
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a "controlled document". Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
(c) 2000 Elantec Semiconductor, Inc.
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Absolute Maximum Ratings (T
A
= 25C)
Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. +18V Supply Voltage between VS+ and VSInput Voltage VS- - 0.5V, VS +0.5V Maximum Continuous Output Current 30mA
Maximum Die Temperature Storage Temperature Operating Temperature Power Dissipation ESD Voltage
+125C -65C to +150C -40C to +85C See Curves 2kV
Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS+ = +5V, VS - = -5V, RL = 1k and CL = 12pF to 0V, TA = 25C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN CMIR CMRR AVOL VOL VOH ISC IOUT PSRR IS SR tS BW GBWP PM CS dG dP Input Offset Voltage Average Offset Voltage Drift [1] Input Bias Current Input Impedance Input Capacitance Common-Mode Input Range Common-Mode Rejection Ratio Open-Loop Gain Output Swing Low Output Swing High Short Circuit Current Output Current Power Supply Rejection Ratio Supply Current (Per Amplifier) Slew Rate [2] Settling to +0.1% (AV = +1) -3dB Bandwidth Gain-Bandwidth Product Phase Margin Channel Separation Differential Gain [3] Differential Phase[3] f = 5MHz RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V VS is moved from 2.25V to 7.75V No Load -4.0V VOUT 4.0V, 20% o 80% (AV = +1), VO = 2V Step 60 for VIN from -5.5V to 5.5V -4.5V VOUT 4.5V IL = -5mA IL = 5mA 4.8 -5.5 50 65 70 80 -4.9 4.9 120 30 80 2.5 33 140 30 20 50 110 0.12 0.17 3.75 -4.8 VCM = 0V VCM = 0V 3 7 2 1 2 +5.5 60 15 mV V/C nA G pF V dB dB V V mA mA dB mA V/s ns MHz MHz dB % Description Condition Min Typ Max Unit
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used
2
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 5V, VS- = 0V, RL = 1k and CL = 12pF to 2.5V, TA = 25C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN CMIR CMRR AVOL VOL VOH ISC IOUT PSRR IS SR tS BW GBWP PM CS dG dP Input Offset Voltage Average Offset Voltage Drift [1] Input Bias Current Input Impedance Input Capacitance Common-Mode Input Range Common-Mode Rejection Ratio Open-Loop Gain Output Swing Low Output Swing High Short Circuit Current Output Current Power Supply Rejection Ratio Supply Current (Per Amplifier) Slew Rate [2] Settling to +0.1% (AV = +1) -3dB Bandwidth Gain-Bandwidth Product Phase Margin Channel Separation Differential Gain [3] Differential Phase[3] f = 5MHz RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V VS is moved from 4.5V to 15.5V No Load 1V VOUT 4V, 20% o 80% (AV = +1), VO = 2V Step 60 for VIN from -0.5V to 5.5V 0.5V VOUT 4.5V IL = -5mA IL = 5mA 4.8 -0.5 45 65 66 80 100 4.9 120 30 80 2.5 33 140 30 20 50 110 0.30 0.66 3.75 200 VCM = 2.5V VCM = 2.5V 3 7 2 1 2 +5.5 60 15 mV V/C nA G pF V dB dB mV V mA mA dB mA V/s ns MHz MHz dB % Description Condition Min Typ Max Unit
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used
3
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 15V, VS- = 0V, RL = 1k and CL = 12pF to 7.5V, TA = 25C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN CMIR CMRR AVOL VOL VOH ISC IOUT PSRR IS SR tS BW GBWP PM CS dG dP Input Offset Voltage Average Offset Voltage Drift [1] Input Bias Current Input Impedance Input Capacitance Common-Mode Input Range Common-Mode Rejection Ratio Open-Loop Gain Output Swing Low Output Swing High Short Circuit Current Output Current Power Supply Rejection Ratio Supply Current (Per Amplifier) Slew Rate [2] Settling to +0.1% (AV = +1) -3dB Bandwidth Gain-Bandwidth Product Phase Margin Channel Separation Differential Gain [3] Differential Phase[3] f = 5MHz RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V VS is moved from 4.5V to 15.5V No Load 1V VOUT 14V, 20% o 80% (AV = +1), VO = 2V Step 60 for VIN from -0.5V to 15.5V 0.5V VOUT 14.5V IL = -7.5mA IL = 7.5mA 14.65 -0.5 53 65 72 80 170 14.83 120 30 80 2.5 33 140 30 20 50 110 0.10 0.11 3.75 350 VCM = 7.5V VCM = 7.5V 3 7 2 1 2 +15.5 60 15 mV V/C nA G pF V dB dB mV V mA mA dB mA V/s ns MHz MHz dB % Description Condition Min Typ Max Unit
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used
4
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
EL5410C Input Offset Voltage Distribution 500 VS=5V TA=25C Typical Production Distortion Quantity (Amplifiers) 25 VS=5V 20 Typical Production Distortion EL5410C Input Offset Voltage Drift
400 Quantity (Amplifiers)
300
15
200
10
100
5
0 -12 -10 -8 -6 -4 -2 -0 2 4 6 8 10 12 Input Offset Voltage (mV)
0 1 3 5 7 9 11 13 15 17 19 Input Offset Voltage Drift, TCVOS( V/C) 21 150 150
Input Offset Voltage vs Temperature 5 0.008
Input Bias Current vs Temperature
Input Offset Voltage (mV)
4 Input Bias Current ( A)
0.004
VS=5V
3
0
2
-0.004
1
-0.008
0 -50
-10
30
70
110
150
-0.012 -50
-10
30
70
110
Temperature (C)
Temperature (C)
Output High Voltage vs Temperature 4.96 -4.85
Output Low Voltage vs Temperature
4.95 Output High Voltage (V) Output Low Voltage (V) VS=5V IOUT=5mA 4.94
-4.87 VS=5V IOUT=5mA -4.89
4.93
-4.91
4.92
-4.93
4.91 -50
-10
30
70
110
150
-4.95 -50
-10
30
70
110
Temperature (C)
Temperature (C)
5
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Open-Loop Gain vs Temperature 90 33.85 33.80 Open-Loop Gain (dB) 85 Slew Rate (V/ S) VS=5V RL=1k 33.75 33.70 33.65 33.60 70 -50
Slew Rate vs Temperature
VS=5V
80
75
-10
30 70 Temperature (C)
110
150
33.55 -40
0
40
80
120
160
Temperature (C)
EL5410C Supply Current per Amplifier vs Supply Voltage 2.9 2.7 Supply Current (mA) 2.5 2.3 2.1 1.9 1.7 1.5 4 8 12 Supply Voltage (V) 16 20 TA=25C Supply Current (mA) 2.7 2.65 2.6 2.55 2.5 2.45
EL5410C Supply Current per Amplifier vs Temperature
VS=5V
2.4 -50
-10
30 70 Temperature (C)
110
150
Differential Gain and Phase 0.25 Diff Gain (%) 0.15 0.05 Distortion (dB) -0.05 0 100 200 -50 VS=5V AV=2 RL=1k -30
Harmonic Distortion vs VOP-P
-40
VS=5V AV=1 RL=1k FIN = 1MHz
HD3
HD2 -60
Diff Phase ()
0.20 0.10 0 -0.10 0 100 IRE 200
-70
-80 0 2 4 VOP-P (V) 6 8 10
6
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Open Loop Gain and Phase vs Frequency 140 Phase Magnitude (Normalized) (dB) 100 150 3 1k 1 0 -1 AV=1 VS=5V CL=12pF 560 250 5 10k Frequency Response for Various RL
Gain (dB)
20 VS=5V TA=25C RL=1k to GND CL=12pF to GND 100 1k 10k
Gain
-50
-20
-150
Phase ()
60
50
-3
150
-60 10
100k
1M
10M
-250 100M
-5 100k
1M Frequency (Hz)
10M
100M
Frequency (Hz)
Frequency Response for Various CL 20 100pF 1000pF Magnitude (Normalized) (dB) 10 47pF Output Impedance () 10pF 160 200
Closed Loop Output Impedance vs Frequency
AV=1 VS=5V TA=25C
0
120
-10 RL=1k AV=1 VS=5V
80
-20
40
-30 100k
1M Frequency (Hz)
10M
100M
0 10k
100k
1M Frequency (Hz)
10M
30M
Maximum Output Swing vs Frequency 10 80
CMRR vs Frequency
Maximum Output Swing (VP-P)
8
70
6 VS=5V TA=25C AV=1 RL=1k CL=12pF Distortion <1%
4
CMRR (dB)
60
50 VS=5V TA=25C
2
40
0 10k
30 100k Frequency (Hz) 1M 10M 10 100 1k 10k 100k 1M 10M 30M Frequency (Hz)
7
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
PSRR vs Frequency 80 PSRR+ 60 PSRR (dB) PSRRVoltage Noise (nVHz) 100 1000 Input Voltage Noise Spectral Density vs Frequency
40 VS=5V TA=25C
10
20
0 100
1k
10k
100k
1M
10M
1 100
1k
10k
100k Frequency (Hz)
1M
10M
100M
Frequency (Hz)
Total Harmonic Distortion + Noise vs Frequency 0.010 -60
Channel Separation vs Frequency Response
0.008
-80
Dual measured Channel A to B Quad measured Channel A to D or B to C Other combinations yield improved rejection
THD+ N (%)
0.004 VS=5V RL=1k AV=1 VIN=0.5VRMS 10k Frequency (Hz) 100k
XTalk (dB)
0.006
-100
-120 VS=5V RL=1k AV=1 VIN=110mVRMS 1k 10k 100k 1M Frequency (Hz) 10M 30M
0.002
-140
0 1k
-160
Small-Signal Overshoot vs Load Capacitance 100 VS=5V AV=1 RL=1k VIN=50mV TA=25C 5 4 3 2 Step Size (V) 1 0 -1 -2 20 -3 -4 0 10 100 Load Capacitance (pF) 1000
Settling Time vs Step Size VS=5V AV=1 RL=1k CL=12pF TA=25C
80 Overshoot (%)
0.1%
60
40
0.1%
-5 70
90
110
130
150
170
190
210
230
Settling Time (ns)
8
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Large Signal Transient Response 1V 200ns Small Signal Transient Response 50mV VS=5V TA=25C AV=1 RL=1k CL=12pF 100nS
VS=5V TA=25C AV=1 RL=1k CL=12pF
9
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Pin Descriptions
EL5210C 1 EL5410C 1 Name VOUTA Function Amplifier A Output
VS+
Equivalent Circuit
VSGND Circuit 1
2
2
VINA-
Amplifier A Inverting Input
VS+
VSCircuit 2
3 8 5 6 7
3 4 5 6 7 8 9 10
VINA+ VS+ VINB+ VINBVOUTB VOUTC VINCVINC+ VSVIND+ VINDVOUTD
Amplifier A Non-Inverting Input Positive Power Supply Amplifier B Non-Inverting Input Amplifier B Inverting Input Amplifier B Output Amplifier C Output Amplifier C Inverting Input Amplifier C Non-Inverting Input Negative Power Supply Amplifier D Non-Inverting Input Amplifier D Inverting Input Amplifier D Output
(Reference Circuit 2)
(Reference Circuit 2) (Reference Circuit 2) (Reference Circuit 1) (Reference Circuit 1) (Reference Circuit 2) (Reference Circuit 2)
4
11 12 13 14
(Reference Circuit 2) (Reference Circuit 2) (Reference Circuit 1)
10
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Applications Information
Product Description
The EL5210C and EL5410C voltage feedback amplifiers are fabricated using a high voltage CMOS process. They exhibit Rail-to-Rail input and output capability, are unity gain stable and have low power consumption (2.5mA per amplifier). These features make the EL5210C and EL5410C ideal for a wide range of general-purpose applications. Connected in voltage follower mode and driving a load of 1k and 12pF, the EL5210C and EL5410C have a -3dB bandwidth of 30MHz while maintaining a 33V/S slew rate. The EL5210C is a dual amplifier while the EL5410C is a quad amplifier. connected to GND. The input is a 10Vp-p sinusoid. The output voltage is approximately 9.8VP-P.
5V 10 S
VS=5V TA=25C AV=1 VIN=10VP-P
5V
Operating Voltage, Input, and Output
The EL5210C and EL5410C are specified with a single nominal supply voltage from 5V to 15V or a split supply with its total range from 5V to 15V. Correct operation is guaranteed for a supply range of 4.5V to 16.5V. Most EL5210C and EL5410C specifications are stable over both the full supply range and operating temperatures of -40 C to +85 C. Parameter variations with operating voltage and/or temperature are shown in the typical performance curves. The input common-mode voltage range of the EL5210C and EL5410C extends 500mV beyond the supply rails. The output swings of the EL5210C and EL5410C typically extend to within 100mV of positive and negative supply rails with load currents of 5mA. Decreasing load currents will extend the output voltage range even closer to the supply rails. Figure 1 shows the input and output waveforms for the device in the unity-gain configuration. Operation is from +/-5V supply with a 1k load
Figure 1. Operation with Rail-to-Rail Input and Output Short Circuit Current Limit
The EL5210C and EL5410C will limit the short circuit current to +/-120mA if the output is directly shorted to the positive or the negative supply. If an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. Maximum reliability is maintained if the output continuous current never exceeds +/-30mA. This limit is set by the design of the internal metal interconnects.
Output Phase Reversal
The EL5210C and EL5410C are immune to phase reversal as long as the input voltage is limited from VS- 0.5V to VS+ +0.5V. Figure 2 shows a photo of the output of the device with the input voltage driven beyond the supply rails. Although the device's output will not change phase, the input's overvoltage should be avoided. If an input voltage exceeds supply voltage by more than 0.6V, electrostatic protection diodes placed in the input
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Output
Input
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
stage of the device begin to conduct and overvoltage damage could occur. power supply voltage, plus the power in the IC due to the loads, or:
P D MAX = i [ V S x I SMA X + ( V S + - V OU T i ) x I L OA D i ]
1V 10 S
when sourcing, and
P D MA X = i [ V S x I SM AX + ( V OU T i - V S - ) x I L OA D i ]
VS=2.5V TA=25C AV=1 VIN=6VP-P 1V
when sinking. Where: i = 1 to 2 for Dual and 1 to 4 for Quad VS = Total Supply Voltage
Figure 2. Operation with Beyond-the-Rails Input Power Dissipation
With the high-output drive capability of the EL5210C and EL5410C amplifiers, it is possible to exceed the 125C 'absolute-maximum junction temperature' under certain load current conditions. Therefore, it is important to calculate the maximum junction temperature for the application to determine if load conditions need to be modified for the amplifier to remain in the safe operating area. The maximum power dissipation allowed in a package is determined according to:
T JM AX - T A MA X P D MAX = ------------------------------------------- JA
ISMAX = Maximum Supply Current Per Amplifier VOUTi = Maximum Output Voltage of the Application ILOADi = Load current If we set the two PDMAX equations equal to each other, we can solve for RLOADi to avoid device overheat. Figure 3 and Figure 4 provide a convenient way to see if the device will overheat. The maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. By using the previous equation, it is a simple matter to see if PDMAX exceeds the device's power derating curves. To ensure proper operation, it is important to observe the recommended derating curves shown in Figure 3 and Figure 4.
Where: TJMAX = Maximum Junction Temperature TAMAX= Maximum Ambient Temperature JA = Thermal Resistance of the Package PDMAX = Maximum Power Dissipation in the Package. The maximum power dissipation actually produced by an IC is the total quiescent supply current times the total
12
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
lower. The inverting input should be directly connected to the output and the non-inverting input tied to the ground plane.
Packages Mounted on a JEDEC JESD51-7 High Effective Thermal Conductivity Test Board 1200 1000 Power Dissipation (mW) 800 600 400 200 0 0 25 50 75 85 100 Ambient Temperature (C) 125 150 SO14 JA=88C/W 1.136W 1.0W 909mW MAX TJ=125C 833mW
Driving Capacitive Loads
The EL5210C and EL5410C can drive a wide range of capacitive loads. As load capacitance increases, however, the -3dB bandwidth of the device will decrease and the peaking increase. The amplifiers drive 10pF loads in parallel with 1k with just 1.2dB of peaking, and 100pF with 6.5dB of peaking. If less peaking is desired in these applications, a small series resistor (usually between 5 and 50) can be placed in series with the output. However, this will obviously reduce the gain slightly. Another method of reducing peaking is to add a "snubber" circuit at the output. A snubber is a shunt load consisting of a resistor in series with a capacitor. Values of 150 and 10nF are typical. The advantage of a snubber is that it does not draw any DC load current or reduce the gain
SO8 JA=110C/W MSOP8 JA=115C/W
TSSOP14 JA=100C/W
Figure 3. Package Power Dissipation vs Ambient Temperature
Packages Mounted on a JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board 1200 MAX TJ=125C 1000 Power Dissipation (mW) 800 600 400 200 0 0 25 50 75 85 100 Ambient Temperature (C) 125 150 485mW SO8 JA=160C/W MSOP8 JA=206C/W 833mW 606mW 625mW TSSOP14 JA=165C/W SO14 JA=120C/W
Power Supply Bypassing and Printed Circuit Board Layout
The EL5210C and EL5410C can provide gain at high frequency. As with any high-frequency device, good printed circuit board layout is necessary for optimum performance. Ground plane construction is highly recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to reduce the risk of oscillation. For normal single supply operation, where the VS- pin is connected to ground, a 0.1F ceramic capacitor should be placed from VS+ to pin to VS- pin. A 4.7F tantalum capacitor should then be connected in parallel, placed in the region of the amplifier. One 4.7F capacitor may be used for multiple devices. This same capacitor combination should be placed at each supply pin to ground if split supplies are to be used.
Figure 4. Package Power Dissipation vs Ambient Temperature Unused Amplifiers
It is recommended that any unused amplifiers in a dual and a quad package be configured as a unity gain fol-
13
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement.
WARNING - Life Support Policy
November 16, 2000
Elantec Semiconductor, Inc.
675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: (408) 945-9305 European Office: +44-118-977-6080 Japan Technical Center: +81-45-682-5820
14
Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.'s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages.
Printed in U.S.A.

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